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18 May 2005 Highly efficient THz modulation using optically excited silicon
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Abstract
Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Canan Karaalioglu, I-Chun Anderson Chen, Martin Brucherseifer, Azza Meshal, and Rainer Martini "Highly efficient THz modulation using optically excited silicon", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); https://doi.org/10.1117/12.604897
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