Highly efficient THz modulation using optically excited silicon

Canan Karaalioglu; I-Chun Anderson Chen; Martin Brucherseifer; Azza Meshal; Rainer Martini

doi:10.1117/12.604897

Translator Disclaimer

18 May 2005 Highly efficient THz modulation using optically excited silicon

Canan Karaalioglu, I-Chun Anderson Chen, Martin Brucherseifer, Azza Meshal, Rainer Martini

Author Affiliations +

Proceedings Volume 5790, Terahertz for Military and Security Applications III; (2005) https://doi.org/10.1117/12.604897
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.

Citation Download Citation

Canan Karaalioglu, I-Chun Anderson Chen, Martin Brucherseifer, Azza Meshal, and Rainer Martini "Highly efficient THz modulation using optically excited silicon", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); https://doi.org/10.1117/12.604897

ACCESS THE FULL ARTICLE