Paper
7 June 2005 HgCdTe based PEM detector for middle range of IR spectrum
F. N. Gaziyev, I. A. Nasibov, T. I. Ibragimov, E. K. Huseynov
Author Affiliations +
Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628871
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
The calculation of dependence photoelectric parameters of the uncooled photoelectromagnetic (PEM) detector of infrared range of spectrum on the basis of monocrystals CdxHg1-xTe (x=0,2) from the level of an acceptor doping of semiconductor material was carried out. It is shown that the optimum acceptor doping allows to increase essentially both the voltage response and specific detectivity of photodetector. The modified construction of the PEM detector permitting to increase more its voltage response is represented. The photoelectric parameters of manufactured PEM detector for middle range of IR-spectrum of 3-7 μm with a maximum of responsivity near 6 μm are given.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. N. Gaziyev, I. A. Nasibov, T. I. Ibragimov, and E. K. Huseynov "HgCdTe based PEM detector for middle range of IR spectrum", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628871
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KEYWORDS
Sensors

Doping

Magnetism

Electrons

Infrared sensors

Chemical elements

Diffusion

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