Paper
7 June 2005 Photoelectric properties of isotype heterojunctions n-InSe< REE >/n-CuInSe2 in visible and near-IR region
A. Sh. Abdinov, R. F. Babayeva, R. M. Ismayilov, G. H. Eyvazova
Author Affiliations +
Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628683
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
By the method of landing to optical contact isotype n-InSe< REE >/n-CuInSe2 heterojunctions with percentage of introduced impurity NREE=0; 10-5; 10-4; 10-3; 10-2 and 10-1 at. % rare-earth elements (REE) of gadolinium, holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on NREE have been found out and mechanisms for their explanations have been offered.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Sh. Abdinov, R. F. Babayeva, R. M. Ismayilov, and G. H. Eyvazova "Photoelectric properties of isotype heterojunctions n-InSe< REE >/n-CuInSe2 in visible and near-IR region", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628683
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KEYWORDS
Heterojunctions

Doping

Dysprosium

Holmium

Visible radiation

Crystals

Gadolinium

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