Paper
7 June 2005 The effect of doping of rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals
A. Sh. Abdinov, R. F. Babayeva, R. M. Rzayev, G. H. Eyvazova
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Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628875
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation
Abstract
The effect of doping by rare earth elements (REE) such as Gd, Ho and Dy at NREE≈0≈10-1 at. % on initial, as well as sensibiized IR-photosensitivity in the crystals of layered semiconductor n-InSe have been investigated. It is shown that dependence of the initial and sensibilized IR-photosensitivity on the level of doping by REE in investigated InSe crystals is caused by dependence of a degree of spatial heterogeneity of a crystal, energy depth of shallow α-sticking levels and slow r-centers of recombination, and also densitity of shallow α-sticking levels on NREE.
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A. Sh. Abdinov, R. F. Babayeva, R. M. Rzayev, and G. H. Eyvazova "The effect of doping of rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628875
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