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The effect of doping by rare earth elements (REE) such as Gd, Ho and Dy at NREE≈0≈10-1 at. % on initial, as well as sensibiized IR-photosensitivity in the crystals of layered semiconductor n-InSe have been investigated. It is shown that dependence of the initial and sensibilized IR-photosensitivity on the level of doping by REE in investigated InSe crystals is caused by dependence of a degree of spatial heterogeneity of a crystal, energy depth of shallow α-sticking levels and slow r-centers of recombination, and also densitity of shallow α-sticking levels on NREE.
A. Sh. Abdinov,R. F. Babayeva,R. M. Rzayev, andG. H. Eyvazova
"The effect of doping of rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628875
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A. Sh. Abdinov, R. F. Babayeva, R. M. Rzayev, G. H. Eyvazova, "The effect of doping of rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals," Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628875