Vidicons sensitive in the medium infrared spectral region with phototargets based on semiconductor-insulator structures

N. F. Kovtonjuk; V. P. Misnik; A. V. Sokolov

doi:10.1117/12.629097

7 June 2005 Vidicons sensitive in the medium infrared spectral region with phototargets based on semiconductor-insulator structures

N. F. Kovtonjuk, V. P. Misnik, A. V. Sokolov

Author Affiliations +

Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.629097
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation

Abstract

The kinetics of electron processes in the vidicons' phototargets based on semiconductor-insulator structures of narrow-gap semiconductors in view of charge draining in the insulator layer and nonequilibrium depletion region in the semiconductor layer is addressed. Integration time, threshold sensitivity and phototarget resolution for different levels of input radiation are estimated.

Citation Download Citation

N. F. Kovtonjuk, V. P. Misnik, and A. V. Sokolov "Vidicons sensitive in the medium infrared spectral region with phototargets based on semiconductor-insulator structures", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.629097

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