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1 July 2005 Gas microsensing system with a FGMOS on a MEM structure
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Proceedings Volume 5836, Smart Sensors, Actuators, and MEMS II; (2005) https://doi.org/10.1117/12.607946
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
In this work a thin film gas microsensor based on both a double polysilicon micro-hotplate (MHP) and a polysilicon floating gate MIS transistor (FG-MIS) is described. Sensing section is a squared polysilicon plate which contains a doped Zinc Oxide (ZnO) thin film. The sensing section is heated by an U-shaped polysilicon stripe which is electrically isolated from the top and the bottom using oxide films. The micro-hotplate is both mechanically supported and thermally isolated using a deep cavity micromachined in the silicon substrate. The sensing film is electrically connected to the floating-gate transistor where the conductivity channel is modulated by the charged generated at the sensing film. The sensor structure was characterized for detecting carbon monoxide (CO) at 300 °C. The hot area is thermally isolated using an arrangement of cavities micromachined in the silicon substrate. Finally a complete layout of the sensor system is presented in this paper.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose Luis Gonzalez-Vidal, Alfredo Reyes-Barranca, M. de la L. Olvera, Arturo Maldonado, and Wilfrido Calleja-Arriaga "Gas microsensing system with a FGMOS on a MEM structure", Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); https://doi.org/10.1117/12.607946
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