MEMS based tunable infrared sensors

J. Antoszewski; K. J. Winchester; A. J. Keating; T. Nguyen; K. K. M. B. D. Silva; H. Huang; C. A. Musca; J. M. Dell; L. Faraone; P. Mitra; J. D. Beck; M. R. Skokan; J. E. Robinson

doi:10.1117/12.624884

7 July 2005 MEMS based tunable infrared sensors (Invited Paper)

J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K. M. B. D. Silva, H. Huang, C. A. Musca, J. M. Dell, L. Faraone, P. Mitra, J. D. Beck, M. R. Skokan, J. E. Robinson

Author Affiliations +

Proceedings Volume 5840, Photonic Materials, Devices, and Applications; (2005) https://doi.org/10.1117/12.624884
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

A low temperature MEMS process integrated with an infrared detector technology has been developed. The integrated microsystem is capable of electrically selecting narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The integrated fabrication process is compatible with two-dimensional infrared focal plane array technology. The demonstration prototypes consist of both HgCdTe SWIR photoconductive as well as high density vertically integrated photodiode (HDVIP®) detectors, two distributed Bragg mirrors formed of Ge-SiO-Ge, an air-gap optical cavity, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors indicates a wide tuning range and high percentage transmission. Tuning is achieved with a voltage of only 7.5 V, and the FWHM ranged from 95-105 nm over a tuning range of 2.2 μm to 1.85 μm. The same MEMS filters, though unreleased, and with the sacrificial layer within the optical cavity, have been fabricated on planarised SWIR HDVIP® photodiodes with FWHM of less than 60 nm centred at a wavelength of approximately 1.8 μm. Finite element modelling of various geometries for the silicon nitride membrane will also be presented. The modelling is used to optimize the filter geometry in terms of fill factor, mirror displacement versus applied voltage, and membrane bowing.

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J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K. M. B. D. Silva, H. Huang, C. A. Musca, J. M. Dell, L. Faraone, P. Mitra, J. D. Beck, M. R. Skokan, and J. E. Robinson "MEMS based tunable infrared sensors (Invited Paper)", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); https://doi.org/10.1117/12.624884

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KEYWORDS

Mirrors

Microelectromechanical systems

Mercury cadmium telluride

Sensors

Optical filters

Short wave infrared radiation

Silicon

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