Paper
7 June 2005 Photophysical ablation of porous silicon as manifestation of mezoscopic force fluctuation in nanowires
V. P. Aksenov, G. N. Mikhailova
Author Affiliations +
Proceedings Volume 5850, Advanced Laser Technologies 2004; (2005) https://doi.org/10.1117/12.633673
Event: Advanced Laser Technologies 2004, 2004, Rome and Frascati, Italy
Abstract
Laser ablation of porous silicon as a function of laser wavelength and width of silicon nanowires was studied in our experiments. The time-resolved evolution of the cloud of the porous silicon particles produced by laser ablation is studied by the analysis of the kinetics of photoluminescence (PL) signal. The laser ablation of porous silicon produced by pulses of 532 nm or 337 nm radiation with addition of synchronized power pulses of 1064 nm radiation. The cloud of the nanometer-sized silicon crystallites had the high enhancement of luminescence quantum efficiency in the red region of spectra. The slow PL kinetics component, which is due to the localized carriers, decays on a millisecond time scale. The mechanism of destruction of the strongly correlated nanostructures was considered. Experimental results were analyzed from the point of view of theoretical models of laser interaction with nanostructures and the theory "Lattinger liquid" proposed by P.W. Anderson (1) for low dimensional nanosystems.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Aksenov and G. N. Mikhailova "Photophysical ablation of porous silicon as manifestation of mezoscopic force fluctuation in nanowires", Proc. SPIE 5850, Advanced Laser Technologies 2004, (7 June 2005); https://doi.org/10.1117/12.633673
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KEYWORDS
Silicon

Laser ablation

Nanowires

Semiconductor lasers

Picosecond phenomena

Nanostructures

Clouds

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