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28 June 2005 Evaluation of mask data preparation with OASIS and P10
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005)
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
OASIS (Open Artwork System Interchange Standard) is the new stream format to replace conventional GDSII and has become a SEMI standard 2003. Also, some EDA software tools already support OASIS. OASIS can apply not only layout design field but also photomask industory. OASIS is effective to reduce data volume even if it is a fractured data, therefore it is expected to solve file size explosion problem. From mask manufacturer's perspective, it is also necessary to consider mask layout information. In present, there are various kinds of layout information and jobdeck formats. These circumstances require complicated data handling and preparation process at the mask manufacturers. Computerized automatic process needs to be more utilized to eradicate mistakes and miscommunications at the planning department. SEMI standard P10 (Specification of Data Structures for Photomask Orders) is one of the solutions. P10 is basically intended to communicate about mask order data which include layout information. This paper reports the result of evaluation of mask data preparation unified with two SEMI standards: P39 (OASIS) and P10. We have developed a reticle pattern viewer (HOTSCOPE) which can view photomask data with combined OASIS with P10. Figure 1 shows connection between mask data formats, which include OASIS and P10 format with our reticle pattern viewer. HOTSCOPE provides reviewing mask data as a photomask image. It will interface between device manufacturers and mask manufacturers.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koki Kuriyama, Yuji Machiya, Kiyoshi Yamasaki, Shogo Narukawa, and Naoya Hayashi "Evaluation of mask data preparation with OASIS and P10", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005);


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