Interaction and balance of mask write time and design RET strategies

Yuan Zhang; Rick Gray; O. Sam Nakagawa; Puneet Gupta; Henry Kamberian; Guangming Xiao; Rand Cottle; Chris Progler

doi:10.1117/12.617146

28 June 2005 Interaction and balance of mask write time and design RET strategies

Yuan Zhang, Rick Gray, O. Sam Nakagawa, Puneet Gupta, Henry Kamberian, Guangming Xiao, Rand Cottle, Chris Progler

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617146
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

It has been demonstrated that the write time for 50keV E-beam masks is a function of layout complexity including figure count, vertex count and total line edge. This study is aimed to improve model fitting by utilizing all the variables generated from CATS. A better correlation of R² = 0.99 was achieved by including quadratic and interaction terms. The vertex model was then applied to estimate write time of various nano-imprint templates. Accuracy of the vertex model is much better than the numbers generated from E-beam tool software. A 90nm test layout was treated with a mask optimization (MO) algorithm. A 26% write time reduction was observed through shot count reduction. The advanced features of the new generation E-beam writing tool combined with mask layout optimization, allows the same level of mask cost even though the capital cost of the new tool set increased 25%.

Citation Download Citation

Yuan Zhang, Rick Gray, O. Sam Nakagawa, Puneet Gupta, Henry Kamberian, Guangming Xiao, Rand Cottle, and Chris Progler "Interaction and balance of mask write time and design RET strategies", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617146

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