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28 June 2005 Interaction and balance of mask write time and design RET strategies
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617146
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
It has been demonstrated that the write time for 50keV E-beam masks is a function of layout complexity including figure count, vertex count and total line edge. This study is aimed to improve model fitting by utilizing all the variables generated from CATS. A better correlation of R2 = 0.99 was achieved by including quadratic and interaction terms. The vertex model was then applied to estimate write time of various nano-imprint templates. Accuracy of the vertex model is much better than the numbers generated from E-beam tool software. A 90nm test layout was treated with a mask optimization (MO) algorithm. A 26% write time reduction was observed through shot count reduction. The advanced features of the new generation E-beam writing tool combined with mask layout optimization, allows the same level of mask cost even though the capital cost of the new tool set increased 25%.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan Zhang, Rick Gray, O. Sam Nakagawa, Puneet Gupta, Henry Kamberian, Guangming Xiao, Rand Cottle, and Chris Progler "Interaction and balance of mask write time and design RET strategies", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617146
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