Translator Disclaimer
Paper
28 June 2005 Process monitoring system for instant defect detection and analysis in 65 nm node photomask fabrications
Author Affiliations +
Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617126
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Defect is a killing factor in photomask fabrications. For 65nm node photomask fabrication, even smaller than 1 um particle can cause hard-to-repair defect. And it is not easy to find the defect source and solve it. For this reason, the process monitoring system that shows us current defect trend rapidly and effectively is highly required. At the same time, this system can be used for verifying the process stability and detecting unusual signals in process.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young-Seok Cho, Jin-Hyung Park, Won-Il Cho, Jin-Hong Park, Yong-Hyun Kim, Seong-Woon Choi, and Woo-Sung Han "Process monitoring system for instant defect detection and analysis in 65 nm node photomask fabrications", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617126
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top