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9 July 1986 Monolithic Integration Of InGaAs PIN-FET : From simple concepts to an involved technology
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Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951210
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
The attractiveness of monolithic InGaAs PIN-FETs for high-speed, long haul optical transmissions at 1.3 -1,6 µm is presented. The requirements of monolithic integration of PIN photodiodes, junction FETs and biasing/feedback resistor are discussed and the fabrication process and operating characteristics of integrable PIN photodiodes and J-FETs grown by Molecular Beam Epitaxy 'are then given.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Allovon, L. Nguyen, J. C. Renaud, P. Blanconnier, F. Heliot, and A. Scavennec "Monolithic Integration Of InGaAs PIN-FET : From simple concepts to an involved technology", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951210
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