Scatter analysis of optical components from 193 nm to 13.5 nm

Sven Schroeder; Mathias Kamprath; Stefan Gliech; Angela Duparre

doi:10.1117/12.616423

31 August 2005 Scatter analysis of optical components from 193 nm to 13.5 nm

Sven Schroeder, Mathias Kamprath, Stefan Gliech, Angela Duparre

Proceedings Volume 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II; 58780T (2005) https://doi.org/10.1117/12.616423
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

Light scattering techniques allow a comprehensive characterization of surfaces and thin film coatings. Driven by the increasing demands on optical components for DUV lithography at 193 nm, a system for ARS and TS measurements at 193 nm and 157 nm has been developed at the Fraunhofer Institute in Jena. The set-up and measurement examples are presented ranging from ARS of low-scattering substrates and dielectric multilayers to the roughness analysis of EUV mirrors. To follow the recent developments of semiconductor industry towards EUV lithography at 13.5 nm, a new EUV scattering measurement system is developed. The current status is reported.

Citation Download Citation

Sven Schroeder, Mathias Kamprath, Stefan Gliech, and Angela Duparre "Scatter analysis of optical components from 193 nm to 13.5 nm", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58780T (31 August 2005); https://doi.org/10.1117/12.616423

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