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7 July 1986 Status Of SAT CID InSb Detector Technology And Applications
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Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986)
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
This paper presents SAT indium antimonide Charge Injection Devices (C.I.D) Technology, post focal plane signal processing and some applications. These detectors are constituted by MOS capacitors realized on InSb wafers using integrated circuit-like processing. When a negative voltage is applied to the structure (put it into depletion) the capacitors form integrating detectors for use in 3-5 pm band. Linear arrays constituted by a line of single capacitors, matrix arrays constituted by a group of two coupled MOS capacitors, collect and store photon generated charge carriers. In the last case, the selection of a site is accomplished by X-Y decoding technique. SAT manufactures currently line arrays with as many as 64 elements and staring arrays with as many as 32 x 32 elements. Works about 128 elements line arrays and 64 x 64 elements matrix array is being develloped. After a brief description of CID mechanisms this paper presents detectors manufacturing and focal plane evaluation method. Staring infrared imagers possess an inherent fixed pattern noise which is determined by the non uniformities in quantum and transfert efficiencies, dark current, electrical coupling circuitry. These defaults must be compensated. On the other hand, staring arrays are characterized by a low integration time : so, a frame averager must be used to be compatible with equipments frame rate and increase signal to noise ratio. This post signal processing used in an experimental camera is to be described. These works are defined in a contract with Direction des Recherches Etudes et Techniques (n° 83.34.073). Other civil and military applications are presented.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Chatard, A. Lussereau, and D. Lorans "Status Of SAT CID InSb Detector Technology And Applications", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986);


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