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18 August 2005 Synchronized low coherence interferometry for in-situ and ex-situ metrology for semiconductor manufacturing
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Low coherence optical interferometry has been proven to be an effective tool for characterization of thin and ultra-thin, transparent and non-transparent semiconductor Si and compound wafers, and MEMs structures for ex-situ and in-situ applications. We demonstrate that use of synchronously operating probes significantly reduces vibration noise observed in the system. We demonstrate that application of synchronized improves reproducibility of measurement with standard (without vibration insulation) 20 Hz acquisition rate low coherence dual probe interferometer from 1.5 um down to below 0.5 micrometer under vibration conditions of modern semiconductor manufacturing facilities. The synchronous configuration also results in reduction of the cost of the multi-probe system by employing one motion stage rather than several independently controlled stages. Finally we discuss recent progress in high-speed measurements allowing as to increase acquisition rate to >10 kHz (acquisition time shorter than 0.07 msec), while maintaining accuracy and reproducibility of standard slower system.
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Wojciech J. Walecki, Alexander Pravdivtsev, Kevin Lai, Manuel Santos II, and Ann Koo "Synchronized low coherence interferometry for in-situ and ex-situ metrology for semiconductor manufacturing", Proc. SPIE 5880, Optical Diagnostics, 58800H (18 August 2005);

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