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12 September 2005 Surface versus lateral illumination effects on an interdigitated Si planar PIN photodiode
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Abstract
The planar PIN Photodiode (PD) has profound advantages compared to the vertical surface/edge illuminated PIN PD. A two dimensional interdigitated silicon PIN PD with a 58 microns × 80 microns active area and finger width of 2 microns and finger spacing of 10 microns respectively was modeled and simulated in a novel approach using Silvaco ATHENA and ATLAS software. The device was illuminated from the surface and laterally and comparison analysis was performed. At a reverse bias of -10 V, the dark current was 1 ps. Photocurrent of 500 nA was obtained for a 5 Wcm-2 optical beam power for both the surface and lateral illumination at a -10 V reverse bias. The total quantum efficiency of the laterally illuminated PIN PD at a wavelength of 850 nm was 95% (responsivity=0.65 A/W) and 75% (responsivity=0.52 A/W) for the surface illuminated PIN PD respectively. The -3dB cutoff frequency of the surface illuminated device was at ~10 kHz and for the laterally illuminated PIN PD, the frequency was at ~0.1 MHz. Lateral illumination in an interdigitated Si planar PIN PD produces higher photocurrent contributing to higher quantum efficiency, responsivity and frequency response as compared to surface illumination.
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P. Susthitha Menon and Sahbudin Shaari "Surface versus lateral illumination effects on an interdigitated Si planar PIN photodiode", Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810S (12 September 2005); https://doi.org/10.1117/12.616283
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