Translator Disclaimer
Paper
16 September 2005 Results of a Si/CdTe Compton telescope
Author Affiliations +
Abstract
We have been developed Si/CdTe semiconductor Compton telescope to explore the universe in the energy band from several 10 keV to a few MeV. In our Si/CdTe Compton telescope, a stacked thin CdTe pixel detector is a key component to achieve higher detection effciency for MeV gamma-rays maintaining high energy resolution. In this paper, results from a prototype stacked CdTe pixel detector are reported, which consists of three layers of CdTe pixel detectors and one CdTe pixel detector at their side. With this prototype detector, we succeeded in Compton reconstruction of images and spectra in the energy band from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kousuke Oonuki, Takaaki Tanaka, Shin Watanabe, Shin'ichiro Takeda, Kazuhiro Nakazawa, Takefumi Mitani, Tadayuki Takahashi, Hiroyasu Tajima, Yasushi Fukazawa, and Masaharu Nomachi "Results of a Si/CdTe Compton telescope", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220J (16 September 2005); https://doi.org/10.1117/12.621809
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Sub MeV all sky survey with a compact Si CdTe...
Proceedings of SPIE (July 24 2014)
Concept of a small satellite for sub MeV and MeV...
Proceedings of SPIE (September 17 2012)
MEGA: the next generation Medium Energy Gamma-ray Telescope
Proceedings of SPIE (October 11 2004)
MEGA: a medium-energy gamma-ray astronomy mission concept
Proceedings of SPIE (August 18 2005)
Development of an Si/CdTe semiconductor Compton telescope
Proceedings of SPIE (September 29 2004)

Back to Top