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16 September 2005 DQE of a CMOS based digital imaging detector for application in mammography
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Physical characteristics necessary to calculate the Detective Quantum Efficiency of a prototype imaging detector based on a 4 x 2 array of tiled CMOS sensors designed for small-field-digital-mammography (SFDM; 10 cm x 10 cm active area) are presented. Objective quantities such as modulation transfer function (MTF), noise power spectrum (NPS) and detective quantum efficiency (DQE) have been evaluated. The X-ray photon fluence per X-ray exposure was determined using Half-Value-Layer (HVL) techniques. At an X-ray beam characterized by 28 kVp, Mo-anode, a Mo filter of 0.025 mm and beam hardening by 4.5 cm Lucite, the detector is practically linear with x-ray exposure at least up to 40.7 mR. At an exposure of 40.7 mR and close to zero spatial frequency the DQE is in the vicinity of 60 to 70 %.
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H. Roehrig, M. A. Baysal, and E. Toker "DQE of a CMOS based digital imaging detector for application in mammography", Proc. SPIE 5923, Penetrating Radiation Systems and Applications VII, 59230J (16 September 2005);

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