Translator Disclaimer
Paper
18 August 2005 Current imprint template commercial manufacturing capability for nanotechnology and existing semiconductor and MEMS markets
Author Affiliations +
Abstract
Imprint lithography has been proposed as a low cost method for next generation lithography for the manufacturing of semiconductors for the 45nm node and below, as costs for traditional optical lithography, and EUV lithography escalate to new levels that may prohibit new semiconductor devices from ever coming to market. While this was the widely proposed use of this technology, a whole host of new areas can take advantage of this lower cost manufacturing technology. MEMS devices that can be scaled to smaller dimensions, construction of nano-optical devices for OLED applications, biosensors, light dispersion gratings and many other types of devices in need of nanometer scale fabrication. The template enables imprinting all these devices. Template manufacturing and development is currently done along side of state of the art reticle manufacturing. While the dimensions of the 1X templates is significantly smaller than what is needed for optical lithography templates, the dimensions are on the same order as the optical assist features, scatter bars and serifs used today. We will show current capability of 1X templates for imprint applications that are available commercially today, for semiconductor and nanofabrication applications.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John G. Maltabes, Scott Mackay, and Rand Cottle "Current imprint template commercial manufacturing capability for nanotechnology and existing semiconductor and MEMS markets", Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 59311H (18 August 2005); https://doi.org/10.1117/12.629499
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Evaluation of a fast and flexible OPC package: OPTISSIMO
Proceedings of SPIE (December 27 1996)
Correction method for radial effect caused by spin process
Proceedings of SPIE (December 27 1996)
Insertion of EUVL into high-volume manufacturing
Proceedings of SPIE (August 20 2001)
Tools and processes for MEMS and nanotechnology
Proceedings of SPIE (October 20 2000)
Mask making: today's enabling technology
Proceedings of SPIE (December 07 1994)

Back to Top