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30 August 2005 Novel organic photo FET using photo-sensitive gate dielectric layer
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Abstract
We fabricated a novel type photo-FET using poly(N-vinylcarbazole) as a photosensitive gate dielectric. For the photo-FET, photo-illumination to the PVK insulator layer make the field-effect mobility μFET two order of magnitude higher than dark condition. In particular, under blue-light illumination condition the on-off ratio was also a few ten times higher than dark condition. We concluded that the improvement of the transistor properties resulted from effective charge accumulation at the conductive channel by photo illuminations.
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M. Yoshida, H. Kawai, T. Kawai, S. Uemura, S. Hoshino, T. Kodzasa, and T. Kamata "Novel organic photo FET using photo-sensitive gate dielectric layer", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594003 (30 August 2005); https://doi.org/10.1117/12.614582
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