Paper
30 August 2005 Stable semiconducting thiophene polymers and their field effect transistor characteristics
Martin Heeney, Clare Bailey, Kristijonas Genevicius, Mark Giles, Maxim Shkunov, David Sparrowe, Steve Tierney, Weimin Zhang, Iain McCulloch
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Abstract
The development of p-type semiconducting polymers demonstrating good stability under ambient operation is of importance for the development of low cost, printed electronics. We present here the synthesis and full characterisation of two soluble terthiophene polymers, and examine the effect of introducing a fused aromatic heterocycle, thieno[2,3-b]thiophene, into a terthiophene polymer backbone. This heterocycle contains a cross-conjugated central double bond, and its inclusion was shown to have a marked influence on the optical, thermal and electrical properties of the terthiophene polymer. Transistors were fabricated from both polymers, and the operation and storage lifetime under ambient operation was compared.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Heeney, Clare Bailey, Kristijonas Genevicius, Mark Giles, Maxim Shkunov, David Sparrowe, Steve Tierney, Weimin Zhang, and Iain McCulloch "Stable semiconducting thiophene polymers and their field effect transistor characteristics", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 594007 (30 August 2005); https://doi.org/10.1117/12.614778
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Cited by 2 scholarly publications.
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KEYWORDS
Polymers

Field effect transistors

Transistors

Magnesium

Nitrogen

Semiconductors

Crystals

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