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14 September 2005 Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
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Abstract
We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 um spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko, O. Yu. Malyutenko, A. V. Zinovchuk, A. L. Zakheim, D. A Zakheim, I. P. Smirnova, and S. A. Gurevich "Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs", Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59411K (14 September 2005); https://doi.org/10.1117/12.618297
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