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29 September 2005 Si infrared pixelless photonic emitter
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We report on basic principle and technology of Si high-temperature (T>300K) IR emitter based on all optical down conversion concept. The approach is based on the possibility to modulate semiconductor thermal emission power in the spectral range of intra-band electron transitions through shorter wavelength (inter-band transitions) optical pumping (light down conversion process). Device emission bands are matched to transparency windows in atmosphere (3-5 μm and 8-12 μm) by adjusting thin film coat parameters. The carrier lifetime is responsible for the device time response whereas its maximum power emitted (mW-range) activates with temperature increase. One of the major advantages of devices employing optical "read in" technology is that they are free of contacts and junctions, thus making them ideal for operation at high temperatures.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko, V. V. Bogatyrenko, O. Yu. Malyutenko, and S. V. Chyrchyk "Si infrared pixelless photonic emitter", Proc. SPIE 5957, Infrared Photoelectronics, 59570D (29 September 2005);

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