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29 September 2005 Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors
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We report here the recent progress at VIGO/MUT (Military University of Technology) MOCVD Laboratory in the growth of Hg1-xCdxTe multilayer heterostructures for various types of uncooled infrared devices. The detectors are optimized for any wavelength within 1-12 μm spectral range. Hg1-xCdxTe growth with interdiffused multilayer process (IMP) technique has been improved. The total flow of the carrier gas was optimized to improve lateral uniformity of the composition and doping. The parasitic transient stages between the CdTe and HgTe phases were reduced to reasonable minimum. As a result, we were able to grow layers with homogeneous composition and doping, characterized by steep interfaces. The additional benefits were improved morphology, reduced dislocation density, and minimized consumption of precursors. The other issues addressed in this work were growth of heavy As-doped low-x and heavy Idoped high-x materials. Special modification to IMP process has been applied for in-situ control of stoichiometry. To maintain low vacancy concentration, special growth finish procedure has been developed. No post-growth thermal anneal was necessary for device-quality material. The MOCVD grown heterostructures have been successfully used for advanced uncooled infrared photodetectors such as multiple heterojunction photodiodes, multicolor and specially shaped spectral response multiabsorber devices.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Piotrowski, W. Gawron, K. Klos, J. Pawluczyk, J. Piotrowski, P. Madejczyk, and A. Rogalski "Improvements in MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors", Proc. SPIE 5957, Infrared Photoelectronics, 59570J (29 September 2005);


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