p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors

V. V. Tetyorkin; A. V. Sukach; S. V. Stariy; N. V. Zotova; S. A. Karandashev; B. A. Matveev; N. M. Stus

doi:10.1117/12.622181

29 September 2005 p⁺-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors

V. V. Tetyorkin, A. V. Sukach, S. V. Stariy, N. V. Zotova, S. A. Karandashev, B. A. Matveev, N. M. Stus

Proceedings Volume 5957, Infrared Photoelectronics; 59570Z (2005) https://doi.org/10.1117/12.622181
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

The performance of p⁺-InAsSbP/n-InAs infrared (IR) photodiodes prepared by liquid phase epitaxy technique (LPE) is investigated. The current-voltage and capacitance-voltage characteristics, photoresponse and noise spectra are investigated in the temperature range 77-300 K. The trap-assisted current is calculated and compared with experimental data. It is found that at near-room temperatures and small reverse biases U ≤ 0.2 V experimental I-U characteristics are determined by diffusion and generation-recombination mechanisms. The trap-assisted tunnelling is shown to be dominant at higher reverse biases. The heterojunction photodiodes have superior photoresponse spectra in comparison with homojunction photodiodes and high threshold parameters.

Citation Download Citation

V. V. Tetyorkin, A. V. Sukach, S. V. Stariy, N. V. Zotova, S. A. Karandashev, B. A. Matveev, and N. M. Stus "p⁺-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors", Proc. SPIE 5957, Infrared Photoelectronics, 59570Z (29 September 2005); https://doi.org/10.1117/12.622181

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