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Effect of iso-valency doping with S, Se or Zn dopants on Hg1-xCdxTe mechanical, structural and photoelectric properties is considered. It was revealed that iso-valency doping reduced the etch pit density and increased the microhardness in
Hg1-xCdxTe single crystals. Such doping also improved the photoelectric properties, especially increased the excess
carrier lifetime. Taking into account the value of equilibrium concentration of S, Se and Zn iso-valency dopants in Hg1-xCdxTe single crystals it was concluded that the most suitable iso-valency dopant is Se.
Kurban Kurbanov,Viktor Bogoboyashchyy, andIhor Izhnin
"Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals", Proc. SPIE 5957, Infrared Photoelectronics, 59571E (29 September 2005); https://doi.org/10.1117/12.622873
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Kurban Kurbanov, Viktor Bogoboyashchyy, Ihor Izhnin, "Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg 0.79 Cd 0.21 Te single crystals," Proc. SPIE 5957, Infrared Photoelectronics, 59571E (29 September 2005); https://doi.org/10.1117/12.622873