Interface-engineered multilayer mirrors

Sergiy Yulin; Nicolas Benoit; Torsten Feigl; Norbert Kaiser

doi:10.1117/12.624861

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4 October 2005 Interface-engineered multilayer mirrors

Sergiy Yulin, Nicolas Benoit, Torsten Feigl, Norbert Kaiser

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Proceedings Volume 5963, Advances in Optical Thin Films II; 59630U (2005) https://doi.org/10.1117/12.624861
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

Most applications of Mo/Si multilayer optics in EUVL require a high normal incidence reflectivity. Using dc magnetron sputtering we achieved R = 68.8 % @ λ = 13.5 nm. Different interface-engineered Mo/X/Si/X multilayers with maximum reflectivity of 69.6 % at 13.5 nm were developed. These new multilayer mirrors consist of molybdenum and sili-con layers separated by different interdiffusion barriers (X = C and SiC). Microstructure and optical properties of the multilayers have been investigated by small and large angle Cu-Kα scattering, AFM and characterized by EUV reflectometry. A concept for material selection, thickness optimization of interdiffusion barriers and perspectives for their wide application in imaging EUVL optics will be discussed. Some applications of multilayer mirrors in EUVL require not only the highest possible normal incidence reflectivity but also a long-term and thermal stability at the operating temperatures. The Mo/C/Si/C interface-engineered were optimized in terms of high peak reflectivity at a wavelength near 13.5 nm (R_p ⩾ 60.0 %) and broad operating temperature range (T = 20 - 500°C). The best results were obtained with 0.8 nm thickness of carbon interlayers on both interfaces. Annealing in vacuum was carried out at elevated temperatures up to 650 °C for up to 100 hours. The combination of good optical properties and high thermal stability of interface - engineered Mo/C/Si/C multilayer mirrors underlines their potential for their use in EUVL optics.

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Sergiy Yulin, Nicolas Benoit, Torsten Feigl, and Norbert Kaiser "Interface-engineered multilayer mirrors", Proc. SPIE 5963, Advances in Optical Thin Films II, 59630U (4 October 2005); https://doi.org/10.1117/12.624861

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