Paper
30 September 2005 Highly oriented and ordered semiconductor nanowire arrays for photonic device applications
Z. H. Wu, J. Gierak, E. Bourhis, A.-L. Biance, H. E. Ruda
Author Affiliations +
Abstract
Highly oriented gallium arsenide (GaAs) nanowires are grown on GaAs (100), (110) and (111) substrates by molecularbeam epitaxy using vapor-liquid-solid growth. The preferred growth direction of the nanowires is <111>. GaAs nanowire arrays are grown using a number of approaches such as nanochannel alumina template, gold colloid, and patterns fabricated using focused ion beam. Large interwire separation in the range of submicron can be obtained using the later two methods, which is required for applications in photonic devices such as photonic crystals.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. H. Wu, J. Gierak, E. Bourhis, A.-L. Biance, and H. E. Ruda "Highly oriented and ordered semiconductor nanowire arrays for photonic device applications", Proc. SPIE 5971, Photonic Applications in Nonlinear Optics, Nanophotonics, and Microwave Photonics, 597117 (30 September 2005); https://doi.org/10.1117/12.629906
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Cited by 1 scholarly publication.
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KEYWORDS
Nanowires

Gallium arsenide

Gold

Diffraction

Scanning electron microscopy

Semiconductors

Photonic devices

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