Waveguides, bends and Y-junctions with improved transmission and bandwidth in hexagon-type SOI photonic crystal slabs

Cazimir G. Bostan; René M. de Ridder; Henry Kelderman; Alfred Driessen

doi:10.1117/12.639757

14 December 2005 Waveguides, bends and Y-junctions with improved transmission and bandwidth in hexagon-type SOI photonic crystal slabs

Cazimir G. Bostan, René M. de Ridder, Henry Kelderman, Alfred Driessen

Author Affiliations +

Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 597210 (2005) https://doi.org/10.1117/12.639757
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania

Abstract

This paper presents novel ways of implementing waveguide components in photonic crystal slabs based on silicon-on- insulator (SOT). The integration platform we consider consists of hexagonal holes arranged in a triangular lattice ('hexagon-type' photonic crystal). The waveguides are made of one missing row of holes (Wl) with triangular air inclusions symmetrically added on each side of the waveguide. Size and position of these inclusions are tuning parameters for the band diagram and can be used for minimizing the distributed Bragg reflection (DBR) effect. The waveguides show single-mode behavior with reasanably high group velocity and large transmission window, inside the gap between H-like modes**. These waveguides, closely resembling conventional ridge waveguides, can be combined to form efficient bends and Y-junctions. The bends and Y-junctions include intermediate short waveguide sections at haif the bend angle playing the role of corner 'mirrors'. Qualitative design rules were obtained from 2D calculations based on effective index approximation.

Citation Download Citation

Cazimir G. Bostan, René M. de Ridder, Henry Kelderman, and Alfred Driessen "Waveguides, bends and Y-junctions with improved transmission and bandwidth in hexagon-type SOI photonic crystal slabs", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 597210 (14 December 2005); https://doi.org/10.1117/12.639757

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