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14 December 2005 Theoretical analysis of photon statistics on excited number of modes and dopant concentration in Er3+:Ti:LiNbO, waveguide amplifiers
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Proceedings Volume 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II; 59721B (2005) https://doi.org/10.1117/12.639775
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 2004, Bucharest, Romania
Abstract
In the small gain approximation and the unsaturated regime in this paper we report some original results concerning the evaluation of the Fano factor, statistical fluctuation and spontaneous emission factor which characterize the photon statistics on the number of excited modes, dopant concentration and power pumping in the single and double pass Er3+ - doped LiNbO, straight waveguide amplifiers pumped near 1484 nm using erfc, Gaussian and constant profile of the Er3+ ions in LiNbO, crystal. We demonstrated that for 50 mW input pump power the Poisson photon statistics are maintained in the above mentioned amplifiers for concentrations of the Er ions smaller than l026 m-3 and also high gains and low noise figures are achievable. The obtained results can be used for the design of optoelectronic integrated circuits.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Ducariu, G. C. Constantin, and N. N. Puscas "Theoretical analysis of photon statistics on excited number of modes and dopant concentration in Er3+:Ti:LiNbO, waveguide amplifiers", Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 59721B (14 December 2005); https://doi.org/10.1117/12.639775
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