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4 November 2005 Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication
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As the design rule continues to shrink towards 65nm size and beyond the defect criteria are becoming ever more challenging. Pattern fidelity and reticle defects that were once considered as insignificant or nuisance are now becoming significant yield impacting defects. The intent of this study is to utilize the new generation DUV system to compare Die-to-Die Reflected Light inspection and Die-to-Die Transmitted Light Inspection to increase defect detection for optimization of the 65nm node process. In addition, the ReviewSmart will be implemented to help categorically identify systematic tool and process variations and thus allowing user to expedite the learning process to develop a production worthy 65nm node mask process. The learning will be applied to Samsung's pattern inspection strategy, complementing Transmitted Light Inspection, on critical layers of 65 nm node to gain ability to find defects that adversely affect process window.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Do Young Kim, Won Il Cho, Jin Hyung Park, Dong Hoon Chung, Byung Chul Cha, Seong Woon Choi, Woo Sung Han, Ki Hun Park, Nam Wook Kim, Carl Hess, Weimin Ma, and David Kim "Implementation of reflected light die-to-die inspection and ReviewSmart to improve 65nm DRAM mask fabrication", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599209 (4 November 2005);

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