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4 November 2005 Advanced reticle inspection challenges and solutions for 65nm node
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Silicon Technology Development for the ITRS 65nm-node is in the final stage of an intense 2-year cycle with the full-entitlement technology qualification by the end of 2005. Accordingly, reticle technology development in support of the 65nm-node has advanced a great deal since the initial efforts began several years ago. One of the most challenging aspects of 65nm-node mask technology development is the mask inspection, which is also the main cost-driver for the 65nm-node reticle technology. As a result, controlling 65nm-node reticle cost via leveraging advanced mask inspection technologies has become a leading factor in enabling prolonged success of the 65-nm node technology for years to come. With this paper, we report our closing work on reticle inspection capability development for the 65nm-node process technology development cycle for a full-volume production ramp.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won D. Kim, Mark D. Eickhoff, David Kim, and Sandy McCurley "Advanced reticle inspection challenges and solutions for 65nm node", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920C (4 November 2005);

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