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5 November 2005 Real-world impact of inverse lithography technology
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Abstract
In this paper we describe, from the user's point of view, how Inverse Lithography Technology (ILT) differs from Optical Proximity Correction (OPC). We show simulation and experimental results from 90nm and 65nm semiconductor nodes, comparing ILT-generated masks and OPC-generated masks for real-life layouts, in a production environment. In addition, we discuss issues related to complexity and manufacturability of ILT-generated masks.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathan Ho, Yan Wang, Xin Wu, Wolfgang Leitermann, Benjamin Lin, Ming Feng Shieh, Jie-wei Sun, Orson Lin, Jason Lin, Yong Liu, and Linyong Pang "Real-world impact of inverse lithography technology", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921Z (5 November 2005); https://doi.org/10.1117/12.632211
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