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7 November 2005 Hybrid ORC method for low K1 process
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In recent years, more burden is placed on OPC(Optical Proximity effect Correction) and ORC(Optical Rule Check) like never before due to low process margin caused by adoption of "Low K1" technology on lithography process. Normally, chip is composed of cell, core and periphery regions. Each of these regions has different characteristics patterning wise but usually the region with high density has much more chance for pinch, bridge or killing error and also has small process window. So verification of OPCed data must be highly accurate with fast operation speed. In this paper we developed full chip based ORC(Optical Rule Check)which satisfies both need, accuracy and speed. The result of pinch, bridge and small process window verification of Hybrid ORC will be shown followed by comparison of rule and model ORC methods.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Byungho Nam, Jaeseung Choi, Yeongbae Ahn, Cheolkyun Kim, Hyoungsoon Yune, James Moon, Donggyu Yim, and Jinwoong Kim "Hybrid ORC method for low K1 process", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59922T (7 November 2005);

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