Paper
8 November 2005 Inverse lithography technology principles in practice: unintuitive patterns
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Abstract
In this paper we present unintuitive patterns generated by inverse lithography technology. We show examples of contact hole masks designed with ILT that enjoy larger process windows than OPC. We also show variations in ILT-generated masks as the pitch of the contact hole array changes. In another example, we show poly masks designed for better process window to be substantially different from poly masks designed for better fidelity at nominal exposure-defocus (ED) condition. The mask with better fidelity has broken lines in comparison to the original layout. In a third example, we show deep trench mask patterns designed with ILT that, at first glance, bear no resemblance to the original layout, yet provide high fidelity in optical images. These patterns, although complex at first sight, can be generated in substantially simpler form with proper constraints without losing the spirit of ILT masks.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong Liu, Dan Abrams, Linyong Pang, and Andrew Moore "Inverse lithography technology principles in practice: unintuitive patterns", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599231 (8 November 2005); https://doi.org/10.1117/12.632366
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Cited by 25 scholarly publications and 2 patents.
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KEYWORDS
Photomasks

Optical proximity correction

Lithography

Image segmentation

Image quality

Manufacturing

Resolution enhancement technologies

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