A study of organic contamination control on photomask surface for 65-nm tech node

Jong-Min Kim; Han-Byul Kang; Yong-Dae Kim; Hyun-Joon Cho; Sang-Soo Choi

doi:10.1117/12.631267

8 November 2005 A study of organic contamination control on photomask surface for 65nm tech node

Jong-Min Kim, Han-Byul Kang, Yong-Dae Kim, Hyun-Joon Cho, Sang-Soo Choi

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59923D (2005) https://doi.org/10.1117/12.631267
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

In recent years, organic compounds have been clarified as one of major root causes of the haze, and carbon and amine components are major of them to organize. Therefore, both two should be controlled simultaneously for preventing haze defects on photomask. It is well known that UV/O₃ treatment has a strong efficiency of removing organic matters¹. For that reason, we have inserted it into our cleaning process, especially for EA.PSMS. And the surface variation of mask, after UV/O₃ treatment, has been confirmed by the change of surface free energy on it. And organic matters remaining on mask surface have been identified by Gas Chromatography Mass Spectrometry (GC MS) with two different sample preparation methods: Thermal Desorption (TD) and direct extraction. As a result of UV/O₃ treatment, we confirmed that it has an excellent removing efficiency of aromatic compounds and semi-volatile organics on mask surface. Finally, through the haze accelerating tests, we have known that conventional SPM/SC-1 cleaning with UV/ O₃ treatment has been having a much higher threshold energy value in terms of causing haze defects on masks about 20 times higher than that of the cleaning with just SPM/SC-1.

Citation Download Citation

Jong-Min Kim, Han-Byul Kang, Yong-Dae Kim, Hyun-Joon Cho, and Sang-Soo Choi "A study of organic contamination control on photomask surface for 65nm tech node", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923D (8 November 2005); https://doi.org/10.1117/12.631267

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