Paper
30 June 1986 Photoelectrochemical Etching Of Holographic Gratings In Semiconductors And Applications
J. Ph. Schnell, V. Martin, P. Nyeki, B. Loiseaux, G. Illiaquer, J. P. Huignard
Author Affiliations +
Proceedings Volume 0600, Progress in Holographic Applications; (1986) https://doi.org/10.1117/12.952420
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
We describe and analyse the use of the photoelectrochemical etching technique to create holographic relief gratings and patterns in semiconductors such as GaAs. Images and wavefront diffracted in the visible and the I.R. will be shown.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Ph. Schnell, V. Martin, P. Nyeki, B. Loiseaux, G. Illiaquer, and J. P. Huignard "Photoelectrochemical Etching Of Holographic Gratings In Semiconductors And Applications", Proc. SPIE 0600, Progress in Holographic Applications, (30 June 1986); https://doi.org/10.1117/12.952420
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KEYWORDS
Etching

Holography

Diffraction gratings

Gallium arsenide

Diffraction

Semiconductors

Holograms

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