Photoluminescence properties of Er-doped Y<sub>2</sub>O<sub>3</sub> thin films by radical-enhanced atomic layer deposition

Trinh T. Van; John Bargar; Roman Ostroumov; Kang L. Wang; Jane P. Chang

doi:10.1117/12.634531

22 November 2005 Photoluminescence properties of Er-doped Y₂O₃ thin films by radical-enhanced atomic layer deposition

Trinh T. Van, John Bargar, Roman Ostroumov, Kang L. Wang, Jane P. Chang

Proceedings Volume 6002, Nanofabrication: Technologies, Devices, and Applications II; 60020H (2005) https://doi.org/10.1117/12.634531
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

Erbium-doped Y₂O₃ thin films were synthesized by combining radical-enhanced atomic layer deposition (RE-ALD) of Y₂O₃ and Er₂O₃ in an alternating fashion at 350°C. The Er doping level was precisely controlled to range from 6 to 14 at.% by varying the ratio of Y₂O₃:Er₂O₃ cycles during deposition. At 350°C, the films were found to be polycrystalline, showing a preferential growth direction in the [111] direction. Room-temperature photoluminescence (PL) at 1.54 μm, characteristic of the Er³⁺ intra 4f transition, was observed in a 500-Å Er-doped (6 at.%) Y₂O₃ film, showing well resolved Stark features indicating the proper incorporation of Er in the Y₂O₃ host. Extended X-ray absorption fine structure (EXAFS) analysis revealed a six-fold coordination of Er by O in all samples, suggesting that the PL quenching observed at high Er concentration (>8 at.%) is likely dominated by Er ion-ion interaction and not by Er immiscibility in the Y₂O₃ host. The effective absorption cross section for Er³⁺ ions incorporated in Y₂O₃ was determined to be ~10^-18 cm², about three orders of magnitude larger than the direct optical absorption cross section reported for Er³⁺ ions in a stoichiometric SiO₂ host.

Citation Download Citation

Trinh T. Van, John Bargar, Roman Ostroumov, Kang L. Wang, and Jane P. Chang "Photoluminescence properties of Er-doped Y₂O₃ thin films by radical-enhanced atomic layer deposition", Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020H (22 November 2005); https://doi.org/10.1117/12.634531

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