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17 November 2005 Terahertz quantum well photodetectors
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Many applications are expected in the terahertz spectral region and terahertz technology is viewed as one of the most important ones in the coming decade. We report on the design and simulated performance of quantum-well photodetectors for the terahertz (1 - 10 THz) or the very-far-infrared region. We also report on our experimental demonstration of GaAs/AlGaAs photodetectors with background limited infrared performance (BLIP). The device dark current characteristics were optimized by employing thick barriers to reduce inter-well tunneling. BLIP operations were observed for all samples (three in total) designed for different wavelengths. BLIP temperatures of 17, 13, and 12 K were achieved for peak detection frequencies at 9.7, 5.4, and 3.2 THz, respectively. Furthermore, we discuss areas of improvement to make these detectors a viable technology.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Liu, H. Luo, C. Y. Song, Z. R. Wasilewski, and A. J. SpringThorpe "Terahertz quantum well photodetectors", Proc. SPIE 6010, Infrared to Terahertz Technologies for Health and the Environment, 601005 (17 November 2005);

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