Failure analysis of GaN-based current-injected vertical cavity surface-emitting lasers

Joachim Piprek

doi:10.1117/12.631229

25 October 2005 Failure analysis of GaN-based current-injected vertical-cavity surface-emitting lasers

Joachim Piprek

Proceedings Volume 6013, Optoelectronic Devices: Physics, Fabrication, and Application II; 60130B (2005) https://doi.org/10.1117/12.631229
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

This paper investigates internal physical mechanisms that have thus far prevented current-injected InGaN/GaN verticalcavity surface-emitting lasers (VCSELs) from lasing. Advanced device simulation is applied to a realistic VCSEL design. Several obstacles to lasing are identified, including current leakage, lateral carrier non-uniformity, and selfheating during pulsed operation.

Citation Download Citation

Joachim Piprek "Failure analysis of GaN-based current-injected vertical-cavity surface-emitting lasers", Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 60130B (25 October 2005); https://doi.org/10.1117/12.631229

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available