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1 December 2005 980-nm high-power vertical external-cavity surface-emitting semiconductor lasers (VECSEL)
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602003 (2005) https://doi.org/10.1117/12.635713
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
We describe the design, fabrication, and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation, the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guo-guang Lu, Chun-feng He, Xiao-nan Shan, Te Li, Yan-fang Sun, Li Qin, Chang-ling Yan, Yong-qiang Ning, and Li-jun Wang "980-nm high-power vertical external-cavity surface-emitting semiconductor lasers (VECSEL)", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602003 (1 December 2005); https://doi.org/10.1117/12.635713
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