High-performance strain-compensated InGaAsN quantum-well ridge waveguide lasers

Yi Qu; Jing Zhang; Hui Li; Xin Gao; Baoxue Bo; J. X. Zhang; A. Uddin

doi:10.1117/12.634897

5 December 2005 High performance strain-compensated InGaAsN quantum-well ridge waveguide lasers

Yi Qu, Jing Zhang, Hui Li, Xin Gao, Baoxue Bo, J. X. Zhang, A. Uddin

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60200G (2005) https://doi.org/10.1117/12.634897
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

High power InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition (MOCVD) were fabricated with pulsed anodic oxidation. A maximum light power output of 304 mW was obtained from a 10-μm stripe width uncoated laser diode in continuous wave (CW) mode at room temperature. The characteristic temperature of the lasers was 138 K.

Citation Download Citation

Yi Qu, Jing Zhang, Hui Li, Xin Gao, Baoxue Bo, J. X. Zhang, and A. Uddin "High performance strain-compensated InGaAsN quantum-well ridge waveguide lasers", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200G (5 December 2005); https://doi.org/10.1117/12.634897

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