Investigation of the dependence of volume, cap layer, and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Yumin Liu; Yuhong Liu; Zhongyuan Yu

doi:10.1117/12.636558

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5 December 2005 Investigation of the dependence of volume, cap layer, and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Yumin Liu, Yuhong Liu, Zhongyuan Yu

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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602014 (2005) https://doi.org/10.1117/12.636558
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

We systematically investigated the strain field distribution of conical-shaped InAs/GaAs self-organized quantum dot using the two-dimension axis-symmetry model. The normal strain, the hydrostatic and biaxial components along the center axis path of the quantum dots was analyzed. The dependence of these strain components on volume, height-over ratio and cap layer (covered by cap layer or uncovered quantum dot) are investigated for the quantum grown on the (001) substrate. The dependence of the carriers' confining potentials and electronic effective mass on the three circumstances discussed above is also calculated in the framework of eight-band k • p theory. The numerical results are in good agreements with the experiment data in published literature.

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Yumin Liu, Yuhong Liu, and Zhongyuan Yu "Investigation of the dependence of volume, cap layer, and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602014 (5 December 2005); https://doi.org/10.1117/12.636558

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