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5 December 2005 High-temperature and high-speed operation of 1.3-μm uncooled AlGaInAs-InP MQW-DFB lasers
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60201U (2005) https://doi.org/10.1117/12.634283
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
In this paper, we report the high-temperature uncooled and high-speed directly modulated 1.3μm wavelength AlGaInAs/InP MQW-DFB ridge waveguide laser diodes. By optimizing the structure of active region based on AlGaInAs strained MQW, and the design of DFB grating, such as the position, coupling coefficient and the detuning with respect to the material peak gain, we have successfully fabricated high-speed and uncooled 1.3μm DFB laser diodes. Large bandwidth of 15GHz was achieved at room temperature. Large characteristic temperature of 80K and small degradation of slope efficiency of 1.2dB from 25°C to 85°C have been realized.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dingli Wang, Ning Zhou, Jun Zhang, Ruikang Zhang, Xiaodong Huang, Linsong Li, and Jin Chang "High-temperature and high-speed operation of 1.3-μm uncooled AlGaInAs-InP MQW-DFB lasers", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60201U (5 December 2005); https://doi.org/10.1117/12.634283
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