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6 December 2005 CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202T (2005) https://doi.org/10.1117/12.636018
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas, was reported. Lasing has been successfully achieved with a low threshold current density of 506 A/cm2.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoxue Bo, Xin Gao, Jing Zhang, Hui Li, Yi Qu, Baolin Zhang, and Xiaohong Tang "CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202T (6 December 2005); https://doi.org/10.1117/12.636018
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