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5 December 2005 Optical modulator based on GaAs photonic crystals
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Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202W (2005) https://doi.org/10.1117/12.633978
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
In this letter, we propose a novel optical modulator based on GaAs photonic crystals and investigate its optically properties numerically by using the finite-difference time-domain method. The position of the cutoff frequency can be varied by free carriers injection, and the band gap shift can be observed. Band gap shift is used to modulate light. Bing several micrometers length, low insertion loss, and large extinction ratios, the modulator can be used in ultra-small and ultra-dense photonic integrated circuits.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiusheng Li "Optical modulator based on GaAs photonic crystals", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202W (5 December 2005); https://doi.org/10.1117/12.633978
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