You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
5 December 2005VO 2-based microbolometer uncooled infrared focal plane arrays with CMOS readout integrated circuit
Thin films of vanadium dioxide (VO2) were selected for microbolometers. The thin films were fabricated with a novel method mainly including ion-sputtering and annealing. It is found that the electrical properties of these thin films can be controlled by adjusting the time of ion-sputtering and annealing. A standard microbolometer pixel structure of micro-bridge has been applied. Two-dimensional arrays of microbolometers have been fabricated on silicon integrated circuit wafers using a surface micromachining technique. A new type of on-chip readout integrated circuit (ROIC) for 32×32 pixel bolometric detector arrays has been designed and fabricated using a 1.5μm double metal poly complementary metal oxide semiconductor (CMOS) processing. The readout circuit consists of three stages, which provides low noise, a highly stable detector bias, high photon current injection efficiency, high gain, and high speed.
Several prototypes of 32×32 pixel bolometric detector arrays have been designed and fabricated. These arrays consist of detectors with lateral dimensions of 50μm 50μm, and each bolometric detector is on a 100μm pitch. The results of measurement show that the fabricated uncooled infrared focal plane arrays (UIRFPAs) have excellent performance. The frame rate is 50Hz, the pixel operability is above 96%, the responsivity (R) @ f/1 value is up to 15000V/W, the noise equivalent temperature difference (NETD) @ f/1 and 30Hz is about 50mK, and the average power dissipation is only 24.7mW. The results indicate that the technology of fabricating these 32×32 UIRFPAs has potential to be utilized for fabricating low cost and large-scale UIRFPAs.