Paper
23 December 2005 Co-doped Tm,Ho:GdVO4 laser end-pumped by 808nm laser diode
Xingbao Zhang, Youlun Ju, Yuezhu Wang
Author Affiliations +
Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60280N (2005) https://doi.org/10.1117/12.667146
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
In this paper, we report a diode pumped Tm,Ho:GdVO4 laser operating at cryogenic temperature, which has 3.5W of 2-μm output. Tm,Ho:GdVO4 crystal has very stronger and broader absorption spectrum than Tm-Ho co-doped YLF and YAG, and very favorable for diode pumping. The fiber-coupled laser diode of 808nm (core diameter 0.4mm,N.A 0.22) is a pumping source to end-pumping Tm,Ho:GdVO4 crystal. The optical-optical conversion efficiency of 34% and threshold pump power of 0.79W has been achieved. The laser design and laser performance is described.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xingbao Zhang, Youlun Ju, and Yuezhu Wang "Co-doped Tm,Ho:GdVO4 laser end-pumped by 808nm laser diode", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280N (23 December 2005); https://doi.org/10.1117/12.667146
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KEYWORDS
Semiconductor lasers

Crystals

Ions

Thulium

Holmium

Absorption

Diodes

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