980 nm QCW high power semiconductor lasers array

Xin Gao; Baoxue Bo; Yi Qu

doi:10.1117/12.667160

23 December 2005 980 nm QCW high power semiconductor lasers array

Xin Gao, Baoxue Bo, Yi Qu

Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60280W (2005) https://doi.org/10.1117/12.667160
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

High power laser bars become more and more important for pumping of solid-state lasers, medical applications, optical data storage, display, and material processing such as welding, cutting, or surface treatment. Diode lasers array emitting at 980 nm has excited considerable interest as optical pumping source for the Erbium-doped fiber amplifier (EDFA), cladding pumped fiber amplifiers or fiber lasers. A high power multi-mode 980 nm InGaAs laser arrays grown by MBE are reported. Non-absorbing windows are integrated at the ends of the cavity to decrease the light density on the mirror for high power operation. A QCW output power of 64.8 W for lasers array with coated facets is achieved. The threshold current is 7.5 A. The lasing spectrum is peaked at 978 nm with a FWHM of 2.5 nm.

Citation Download Citation

Xin Gao, Baoxue Bo, and Yi Qu "980 nm QCW high power semiconductor lasers array", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280W (23 December 2005); https://doi.org/10.1117/12.667160

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